Negative differential resistance in ZnO coated peptide nanotube
نویسندگان
چکیده
منابع مشابه
Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes
The electrical transport through nanoscale contacts of ZnO nanowires bridging the interdigitated Au electrodes shows the negative differential resistance (NDR) effect. The NDR peaks strongly depend on the starting sweep voltage. The origin of NDR through nanoscale contacts between ZnO nanowires and metal electrodes is the electron charging and discharging of the parasitic capacitor due to the w...
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In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
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Intraconnects, as-grown single-walled carbon nanotubes bridging two metal electrodes, were investigated as gated structures. We show that even with a seemingly "ohmic" contact at zero gate voltage one observes negative differential resistance (NDR) at nonzero gate bias. Large differential photo conductance (DPC) was associated with the NDR effect raising hopes for the fabrication of novel high-...
متن کاملa novel lightly doped drain and source carbon nanotube field effect transistor (cntfet) with negative differential resistance
in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...
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ژورنال
عنوان ژورنال: Applied Physics A
سال: 2013
ISSN: 0947-8396,1432-0630
DOI: 10.1007/s00339-013-7737-9